Operation and modeling of the mos transistors /
Guardat en:
| Autor principal: | |
|---|---|
| Format: | Llibre |
| Idioma: | anglès |
| Publicat: |
New York :
Mc Graw Hill,
C1988 .
|
| Col·lecció: | Mc Graw Hill series in electrical engineering .
|
| Matèries: | |
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| 040 | |a BD-SaJUCL |c BD-SaJUCL |d BD-SaJUCL | ||
| 082 | |a 621.381522 |b T877o | ||
| 100 | |a Tsividis , Yannis P . |9 52077 | ||
| 245 | |a Operation and modeling of the mos transistors / |c Yannis P. Tsividis | ||
| 260 | |a New York : |b Mc Graw Hill, |c C1988 . | ||
| 300 | |a xx, 505p. : ill. ; |c 24cm . | ||
| 490 | |a Mc Graw Hill series in electrical engineering . | ||
| 504 | |a Includes bibliographical references & index . | ||
| 650 | |a Metal oxide semiconductors models . |9 52078 | ||
| 942 | |2 ddc |c BK |n 1 | ||
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