Differentiated Layout Styles for MOSFETs Electrical Behavior in Harsh Environments /

This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout style...

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Auteurs principaux: Gimenez, Salvador Pinillos (Auteur), Galembeck, Egon Henrique Salerno (Auteur)
Collectivité auteur: SpringerLink (Online service)
Format: Électronique eBook
Langue:anglais
Publié: Cham : Springer International Publishing : Imprint: Springer, 2023.
Édition:1st ed. 2023.
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Accès en ligne:https://doi.org/10.1007/978-3-031-29086-2
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245 1 0 |a Differentiated Layout Styles for MOSFETs  |h [electronic resource] :  |b Electrical Behavior in Harsh Environments /  |c by Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck. 
250 |a 1st ed. 2023. 
264 1 |a Cham :  |b Springer International Publishing :  |b Imprint: Springer,  |c 2023. 
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505 0 |a Chapter 1. Introduction -- Chapter 2. Basic concepts of the semiconductor physics -- Chapter 3. The electrical characteristics of the semiconductor at high temperatures -- Chapter 4. The MOSFET -- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs -- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation. 
520 |a This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area. Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs; Describes innovative layout styles for MOSFETs that don’t entail an additional cost in manufacturing; Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment. 
532 8 |a Accessibility summary: This PDF does not fully comply with PDF/UA standards, but does feature limited screen reader support, described non-text content (images, graphs), bookmarks for easy navigation and searchable, selectable text. Users of assistive technologies may experience difficulty navigating or interpreting content in this document. We recognize the importance of accessibility, and we welcome queries about accessibility for any of our products. If you have a question or an access need, please get in touch with us at accessibilitysupport@springernature.com. 
532 8 |a No reading system accessibility options actively disabled 
532 8 |a Publisher contact for further accessibility information: accessibilitysupport@springernature.com 
588 |a Print version record. 
650 0 |a Electronic circuits. 
650 0 |a Solid state physics. 
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