Differentiated Layout Styles for MOSFETs Electrical Behavior in Harsh Environments /
This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout style...
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| Hlavní autoři: | , |
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| Korporativní autor: | |
| Médium: | Elektronický zdroj E-kniha |
| Jazyk: | angličtina |
| Vydáno: |
Cham :
Springer International Publishing : Imprint: Springer,
2023.
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| Vydání: | 1st ed. 2023. |
| Témata: | |
| On-line přístup: | https://doi.org/10.1007/978-3-031-29086-2 |
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Obsah:
- Chapter 1. Introduction
- Chapter 2. Basic concepts of the semiconductor physics
- Chapter 3. The electrical characteristics of the semiconductor at high temperatures
- Chapter 4. The MOSFET
- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs
- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs
- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs
- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation.