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Gallium Nitride and Related Materials Device Processing and Materials Characterization for Power Electronics Applications /

This book presents progress in device processing and materials characterization of the wide-bandgap semiconductor gallium nitride (GaN) and related materials for power electronics applications. The content of the book is based on the output of multiple well defined and actively managed programs from...

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Opis bibliograficzny
Korporacja: SpringerLink (Online service)
Kolejni autorzy: Kizilyalli, Isik C. (Redaktor), Han, Jung (Redaktor), Speck, James S. (Redaktor), Carlson, Eric P. (Redaktor)
Format: Elektroniczne E-book
Język:angielski
Wydane: Cham : Springer Nature Switzerland : Imprint: Springer, 2025.
Wydanie:1st ed. 2025.
Seria:The Materials Research Society Series,
Hasła przedmiotowe:
Electronic circuits.
Power electronics.
Materials.
Electronic Circuits and Systems.
Power Electronics.
Materials for Devices.
Dostęp online:https://doi.org/10.1007/978-3-031-83056-3
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Spis treści:
  • Part 1 Introduction
  • Chapter 1 Introduction to Vertical GaN Power Electronics
  • Chapter 2 Electronic Transport and Advances in Vertical Bulk GaN Based Power Semiconductor Devices
  • Part 2 Bulk GaN Substrates
  • Chapter 3 Bulk GaN
  • Chapter 4 Near Equilibrium Ammonothermal (NEAT) Growth of Low Dislocation GaN for Power Devices
  • Chapter 5 Use of HVPE for Growth of Bulk GaN Wafers and GaN Epilayers for Power Electronics Applications
  • Chapter 6 X-ray Topography and High-Resolution X-ray Diffraction Characterization of GaN Materials for Power Electronics Applications
  • Part 3 Epitaxial Growth of Gallium Nitride and Processing
  • Chapter 7 Laser assisted MOCVD GaN and the Development of Vertical GaN-on-GaN PN diodes
  • Chapter 8 MOCVD Growth of GaN Drift Layers on Bulk GaN Substrates for Power Electronic Devices
  • Chapter 9 MBE Grown GaN P-N Diodes
  • Chapter 10 Gallium Nitride Wafer Metrology and Device Processing
  • Chapter 11 Layer Transfer of Gallium Nitride by Controlled Spalling
  • Part 4 Selective Area Doping, Processes, and Characterization
  • Chapter 12 In-situ TBCl Etching and Selective-Area Growth and Doping of GaN
  • Chapter 13 Selective Area Regrowth and Doping for Vertical GaN Power Devices
  • Chapter 14 Acceptor Dopant Ion Implant and Gyrotron Rapid Thermal Annealing of GaN
  • Chapter 15 Ion Implantation for p-Type Conductivity in GaN
  • Chapter 16 High Energy Ion Implantation using Electrostatic Accelerators
  • Chapter 17 Solid State Diffusion in GaN
  • Chapter 18 Transmutation Doping of GaN
  • Part 5 Materials Characterization Techniques
  • Chapter 19 Deep Level Defect Spectroscopy and Electron Beam-Induced Current Characterization of GaN Junctions
  • Chapter 20 Ion Beam Analysis of GaN Surfaces and Interfaces
  • Chapter 21 Structural and Chemical Defect Characterization for Selectively Doped GaN
  • Chapter 22 Secondary Ion Mass Spectroscopy (SIMS) Analysis of GaN Epitaxial Films
  • Part 6 Gallium Nitride Materials Properties for Power Electronics Devices
  • Chapter 23 Intrinsic and Extrinsic Thermal Conductivity of Gallium Nitride and Silicon Carbide
  • Chapter 24 Breakdown Phenomena in GaN
  • Chapter 25 Theoretical Modeling of Avalanche Currents in GaN
  • Part 7 Related Wideband Gap Materials and Devices
  • Chapter 26 Cubic GaN: Growth, Characterization, and Applications
  • Chapter 27 Development of Wafer-Scale h-BN Quasi-Bulk Crystals
  • Part 8 Future Outlook
  • Chapter 28 Outlook of Wide Bandgap Semiconductors and Power Electronics in the Energy Transition Towards a More Electric Future.

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