GaN Single Crystal Growth and Application
Based on the author's many years of research, this book expands and complements the latest research results in this field. It introduces in detail the basic principle, growth technology, development status and application trend of GaN single crystal material growth. The author team adopts an op...
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| Auteurs principaux: | , , , |
|---|---|
| Collectivité auteur: | |
| Format: | Électronique eBook |
| Langue: | anglais |
| Publié: |
Singapore :
Springer Nature Singapore : Imprint: Springer,
2025.
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| Édition: | 1st ed. 2025. |
| Collection: | Wide Bandgap Semiconductors,
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| Sujets: | |
| Accès en ligne: | https://doi.org/10.1007/978-981-96-7572-2 |
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| 100 | 1 | |a Xu, Ke. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a GaN Single Crystal Growth and Application |h [electronic resource] / |c by Ke Xu, Jianfeng Wang, Guoqiang Ren, Zongliang Liu. |
| 250 | |a 1st ed. 2025. | ||
| 264 | 1 | |a Singapore : |b Springer Nature Singapore : |b Imprint: Springer, |c 2025. | |
| 300 | |a 1 online resource (XIV, 304 p. 215 illus.). |b 139 illus. in color. | ||
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| 490 | 1 | |a Wide Bandgap Semiconductors, |x 2948-2615 | |
| 505 | 0 | |a Basic Characteristics of GaN Monocrystals -- Basic Characteristics of Gallium Nitride Single Crystal Materials -- Hydride Vapor Phase Epitaxy Method -- Ammonothermal method -- Na-flux method -- Homogeneous Epitaxial Growth Technology of Gallium Nitride Single Crystals -- Progress in Optoelectronic Device Applications -- Applications of Freestanding Gallium Nitride Sbustrates- in Power Electronic and Microwave RF Devices. | |
| 520 | |a Based on the author's many years of research, this book expands and complements the latest research results in this field. It introduces in detail the basic principle, growth technology, development status and application trend of GaN single crystal material growth. The author team adopts an open and learning attitude and discusses the future development of GaN material growth and device applications with colleagues in the field. It is hoped that the publication of this book can present the frontier development status and prospect of GaN material growth and application to personnel in related fields, hoping to make readers more thoughtful and generate positive innovation points. | ||
| 532 | 8 | |a Accessibility summary: This PDF has been created in accordance with the PDF/UA-1 standard to enhance accessibility, including screen reader support, described non-text content (images, graphs), bookmarks for easy navigation, keyboard-friendly links and forms and searchable, selectable text. We recognize the importance of accessibility, and we welcome queries about accessibility for any of our products. If you have a question or an access need, please get in touch with us at accessibilitysupport@springernature.com. Please note that a more accessible version of this eBook is available as ePub. | |
| 532 | 8 | |a No reading system accessibility options actively disabled | |
| 532 | 8 | |a Publisher contact for further accessibility information: accessibilitysupport@springernature.com | |
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| 650 | 2 | 4 | |a Microwaves, RF Engineering and Optical Communications. |
| 700 | 1 | |a Wang, Jianfeng. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 700 | 1 | |a Ren, Guoqiang. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 700 | 1 | |a Liu, Zongliang. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
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