Kapak Resmi

GaN Single Crystal Growth and Application

Based on the author's many years of research, this book expands and complements the latest research results in this field. It introduces in detail the basic principle, growth technology, development status and application trend of GaN single crystal material growth. The author team adopts an op...

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Detaylı Bibliyografya
Asıl Yazarlar: Xu, Ke (Yazar), Wang, Jianfeng (Yazar), Ren, Guoqiang (Yazar), Liu, Zongliang (Yazar)
Müşterek Yazar: SpringerLink (Online service)
Materyal Türü: Elektronik Ekitap
Dil:İngilizce
Baskı/Yayın Bilgisi: Singapore : Springer Nature Singapore : Imprint: Springer, 2025.
Edisyon:1st ed. 2025.
Seri Bilgileri:Wide Bandgap Semiconductors,
Konular:
Materials.
Electronics.
Telecommunication.
Materials for Devices.
Electronics and Microelectronics, Instrumentation.
Microwaves, RF Engineering and Optical Communications.
Online Erişim:https://doi.org/10.1007/978-981-96-7572-2
Etiketler: Etiketle
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İçindekiler:
  • Basic Characteristics of GaN Monocrystals
  • Basic Characteristics of Gallium Nitride Single Crystal Materials
  • Hydride Vapor Phase Epitaxy Method
  • Ammonothermal method
  • Na-flux method
  • Homogeneous Epitaxial Growth Technology of Gallium Nitride Single Crystals
  • Progress in Optoelectronic Device Applications
  • Applications of Freestanding Gallium Nitride Sbustrates- in Power Electronic and Microwave RF Devices.

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