Beyond Si-Based CMOS Devices Materials to Architecture /

This book focuses on summarizing recent research trends for new beyond-CMOS and beyond-silicon devices, circuits, and architectures for computing. It reports the recent achievements in this field from leading research trends around the globe, specifically focusing on nanoscale beyond silicon materia...

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Bibliografske podrobnosti
Korporativna značnica: SpringerLink (Online service)
Drugi avtorji: Singh, Sangeeta (Editor), Sharma, Shashi Kant (Editor), Nandan, Durgesh (Editor)
Format: Elektronski eKnjiga
Jezik:angleščina
Izdano: Singapore : Springer Nature Singapore : Imprint: Springer, 2024.
Izdaja:1st ed. 2024.
Serija:Springer Tracts in Electrical and Electronics Engineering,
Teme:
Online dostop:https://doi.org/10.1007/978-981-97-4623-1
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Kazalo:
  • Beyond Si Based CMOS Devices: Needs, Opportunities and Challenges
  • Nanowire Based Si CMOS Devices
  • Carbon Nanotube FETS: An Alternative For Beyond Si Devices
  • Graphene Based Devices for Beyond CMOS Applications
  • Other Potential 2-D Materials for CMOS Applications
  • Heterogenous Integration of 2D Materials with Silicon-Complementary Metal Oxide Semiconductor (Si-CMOS) Devices
  • TFET: From Material to Device Perspective
  • Negative Capacitance Field Effect Transistor (NCFET): Strong Beyond CMOS Device
  • Nanoelectromechanical Switches: As a Steep switching Device
  • The Device-Circuit Co-Design Perspective on Phase-Transition and Hybrid Phase-Transition (Hyper-) FETs, Phase-FETs, and MOSFET
  • Feedback Field-Effect Transistors/ Zero Subthreshold Swing and Zero Impact Ionization FET
  • Resistive-Gate Field-Effect Transistor: A Potential Steep-Slope Device
  • Spin Field-Effect Transistor: For Steep Switching Behaviour.