Cita APA (7th ed.)

SpringerLink (Online service), Nirmal, D., & Ajayan, J. (2025). Modeling of AlGaN/GaN High Electron Mobility Transistors (1st ed. 2025.). Springer Nature Singapore : Imprint: Springer. https://doi.org/10.1007/978-981-97-7506-4

Cita Chicago (17th ed.)

SpringerLink (Online service), D. Nirmal, i J. Ajayan. Modeling of AlGaN/GaN High Electron Mobility Transistors. 1st ed. 2025. Singapore: Springer Nature Singapore : Imprint: Springer, 2025. https://doi.org/10.1007/978-981-97-7506-4.

Cita MLA (9th ed.)

SpringerLink (Online service), et al. Modeling of AlGaN/GaN High Electron Mobility Transistors. 1st ed. 2025. Springer Nature Singapore : Imprint: Springer, 2025. https://doi.org/10.1007/978-981-97-7506-4.