Beeld op de omslag

Modeling of AlGaN/GaN High Electron Mobility Transistors

This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEM...

Volledige beschrijving

Bewaard in:
Bibliografische gegevens
Coauteur: SpringerLink (Online service)
Andere auteurs: Nirmal, D. (Redacteur), Ajayan, J. (Redacteur)
Formaat: Elektronisch E-boek
Taal:Engels
Gepubliceerd in: Singapore : Springer Nature Singapore : Imprint: Springer, 2025.
Editie:1st ed. 2025.
Reeks:Springer Tracts in Electrical and Electronics Engineering,
Onderwerpen:
Electronic circuits.
Cooperating objects (Computer systems).
Solid state physics.
Electronics > Materials.
Electronic Circuits and Systems.
Cyber-Physical Systems.
Electronic Devices.
Electronic Materials.
Online toegang:https://doi.org/10.1007/978-981-97-7506-4
Tags: Voeg label toe
Geen labels, Wees de eerste die dit record labelt!
Inhoudsopgave:
  • Compact surface potential based algan/gan hemt models
  • Physical Modelling of Charge Trapping Effects
  • Recent Developments and Applications of High Electron Mobility Transistors
  • Neural network based gan hemt modeling techniques.

Gelijkaardige items