Modeling of AlGaN/GaN High Electron Mobility Transistors

This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEM...

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Bibliografske podrobnosti

Korporativna značnica:	SpringerLink (Online service)
Drugi avtorji:	Nirmal, D. (Editor), Ajayan, J. (Editor)
Format:	Elektronski eKnjiga
Jezik:	angleščina
Izdano:	Singapore : Springer Nature Singapore : Imprint: Springer, 2025.
Izdaja:	1st ed. 2025.
Serija:	Springer Tracts in Electrical and Electronics Engineering,
Teme:	Electronic circuits. Cooperating objects (Computer systems). Solid state physics. Electronics > Materials. Electronic Circuits and Systems. Cyber-Physical Systems. Electronic Devices. Electronic Materials.
Online dostop:	https://doi.org/10.1007/978-981-97-7506-4
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