GaN transistor modeling for RF and power electronics : using the ASM-HEMT model /

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Bibliographic Details
Other Authors: Chauhan, Togesh Singh
Format: eBook
Language:English
Published: Cambridge : Woodhead Publishing, 2024.
Series:Woodhead Publishing series in electronic and optical materials
Subjects:
Online Access:ScienceDirect
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008 240601s2024 mau o 000 0 eng d
040 |a YDX  |b eng  |c YDX  |d OPELS  |d OCLCO  |d N$T  |d UKAHL  |d OCLCQ  |d OCLCL  |d OCLCF  |d OCLCO 
020 |a 9780323999403  |q (electronic bk.) 
020 |a 0323999409  |q (electronic bk.) 
020 |z 9780323998710 
020 |z 0323998712 
035 |a (OCoLC)1435616033 
050 4 |a TK7871.9 
082 0 4 |a 621.3815/28  |2 23/eng/20240611  |1 https://id.oclc.org/worldcat/ddc/E3CqMcqhHTCVGJqXd3xfxkqm4v 
245 0 0 |a GaN transistor modeling for RF and power electronics :  |b using the ASM-HEMT model /  |c Yogesh Singh Chauhan [and more]. 
260 |a Cambridge :  |b Woodhead Publishing,  |c 2024. 
300 |a 1 online resource 
490 0 |a Woodhead Publishing series in electronic and optical materials 
650 0 |a Transistors  |x Materials  |x Simulation methods. 
650 0 |a Gallium nitride. 
650 6 |a Transistors  |0 (CaQQLa)201-0034315  |x Matériaux  |0 (CaQQLa)201-0379329  |x Méthodes de simulation.  |0 (CaQQLa)201-0379084 
650 6 |a Nitrure de gallium.  |0 (CaQQLa)201-0286098 
650 7 |a Gallium nitride  |2 fast  |0 (OCoLC)fst00937295 
700 1 |a Chauhan, Togesh Singh. 
776 0 8 |i Print version:  |z 0323998712  |z 9780323998710  |w (OCoLC)1321787169 
856 4 0 |3 ScienceDirect  |u https://www.sciencedirect.com/science/book/9780323998710