GaN transistor modeling for RF and power electronics : using the ASM-HEMT model /
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| Other Authors: | |
|---|---|
| Format: | eBook |
| Language: | English |
| Published: |
Cambridge :
Woodhead Publishing,
2024.
|
| Series: | Woodhead Publishing series in electronic and optical materials
|
| Subjects: | |
| Online Access: | ScienceDirect |
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|---|---|---|---|
| 001 | on1435616033 | ||
| 003 | OCoLC | ||
| 005 | 20260915095226.0 | ||
| 006 | m o d | ||
| 007 | cr |n||||||||| | ||
| 008 | 240601s2024 mau o 000 0 eng d | ||
| 040 | |a YDX |b eng |c YDX |d OPELS |d OCLCO |d N$T |d UKAHL |d OCLCQ |d OCLCL |d OCLCF |d OCLCO | ||
| 020 | |a 9780323999403 |q (electronic bk.) | ||
| 020 | |a 0323999409 |q (electronic bk.) | ||
| 020 | |z 9780323998710 | ||
| 020 | |z 0323998712 | ||
| 035 | |a (OCoLC)1435616033 | ||
| 050 | 4 | |a TK7871.9 | |
| 082 | 0 | 4 | |a 621.3815/28 |2 23/eng/20240611 |1 https://id.oclc.org/worldcat/ddc/E3CqMcqhHTCVGJqXd3xfxkqm4v |
| 245 | 0 | 0 | |a GaN transistor modeling for RF and power electronics : |b using the ASM-HEMT model / |c Yogesh Singh Chauhan [and more]. |
| 260 | |a Cambridge : |b Woodhead Publishing, |c 2024. | ||
| 300 | |a 1 online resource | ||
| 490 | 0 | |a Woodhead Publishing series in electronic and optical materials | |
| 650 | 0 | |a Transistors |x Materials |x Simulation methods. | |
| 650 | 0 | |a Gallium nitride. | |
| 650 | 6 | |a Transistors |0 (CaQQLa)201-0034315 |x Matériaux |0 (CaQQLa)201-0379329 |x Méthodes de simulation. |0 (CaQQLa)201-0379084 | |
| 650 | 6 | |a Nitrure de gallium. |0 (CaQQLa)201-0286098 | |
| 650 | 7 | |a Gallium nitride |2 fast |0 (OCoLC)fst00937295 | |
| 700 | 1 | |a Chauhan, Togesh Singh. | |
| 776 | 0 | 8 | |i Print version: |z 0323998712 |z 9780323998710 |w (OCoLC)1321787169 |
| 856 | 4 | 0 | |3 ScienceDirect |u https://www.sciencedirect.com/science/book/9780323998710 |