FinFET/GAA modeling for IC simulation and design : using the BSIM-CMG standard.
FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enab...
Tallennettuna:
| Päätekijä: | |
|---|---|
| Aineistotyyppi: | Elektroninen E-kirja |
| Kieli: | englanti |
| Julkaistu: |
Amsterdam :
Academic Press,
2024.
|
| Painos: | Second edition. / |
| Aiheet: | |
| Linkit: | ScienceDirect |
| Tagit: |
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| 100 | 1 | |a Chauhan, Yogesh Singh, |e author. | |
| 245 | 1 | 0 | |a FinFET/GAA modeling for IC simulation and design : |b using the BSIM-CMG standard. |
| 250 | |a Second edition. / |b Yogesh Singh Chauhan [and nine others]. | ||
| 264 | 1 | |a Amsterdam : |b Academic Press, |c 2024. | |
| 300 | |a 1 online resource (350 pages) : |b illustrations. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 340 | |p illustration |0 http://rdaregistry.info/termList/IllusContent/1014 |2 rdaill | ||
| 520 | |a FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters. With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more. | ||
| 588 | 0 | |a Print version record. | |
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors. | |
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors |x Standards. | |
| 650 | 0 | |a Three-dimensional integrated circuits. | |
| 650 | 0 | |a Three-dimensional integrated circuits |x Standards. | |
| 650 | 6 | |a Transistors MOSFET. |0 (CaQQLa)201-0184167 | |
| 650 | 6 | |a Transistors MOSFET |0 (CaQQLa)201-0184167 |x Normes. |0 (CaQQLa)201-0373964 | |
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| 650 | 7 | |a Three-dimensional integrated circuits |2 fast |0 (OCoLC)fst01765149 | |
| 776 | 0 | 8 | |i Print version: |a Chauhan, Yogesh Singh. |t FinFET/GAA modeling for IC simulation and design. |b Second edition. |d Amsterdam : Academic Press, 2023 |z 9780323957298 |w (OCoLC)1400086666 |
| 856 | 4 | 0 | |3 ScienceDirect |u https://www.sciencedirect.com/science/book/9780323957298 |