Reliability of CMOS Analog ICs
This book presents recent advances in reliability investigation of MOS transistors and their applications. Theory and experimental results are discussed, in order to demonstrate the efficacy of the techniques presented. Readers will be enabled to improve their designs in application areas of analog...
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| Những tác giả chính: | , , , |
|---|---|
| Tác giả của công ty: | |
| Định dạng: | Điện tử eBook |
| Ngôn ngữ: | Tiếng Anh |
| Được phát hành: |
Cham :
Springer Nature Switzerland : Imprint: Springer,
2025.
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| Phiên bản: | 1st ed. 2025. |
| Loạt: | Analog Circuits and Signal Processing,
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| Những chủ đề: | |
| Truy cập trực tuyến: | https://doi.org/10.1007/978-3-031-85455-2 |
| Các nhãn: |
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| 100 | 1 | |a Kuntman, Hakan. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a Reliability of CMOS Analog ICs |h [electronic resource] / |c by Hakan Kuntman, Deniz Özenli, Fırat Kaçar, Yasin Özçelep. |
| 250 | |a 1st ed. 2025. | ||
| 264 | 1 | |a Cham : |b Springer Nature Switzerland : |b Imprint: Springer, |c 2025. | |
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| 505 | 0 | |a Introduction -- The reliability model for PMOS and NMOS transistors based on statistical methods -- Demonstration of Proposed Method with Application Examples -- On the degradation of OTA-C–based CMOS low-power filter circuits for biomedical instrumentation -- Power MOSFET degradation and statistical investigation of the degradation effect on DC-DC converters and converter parameters. | |
| 520 | |a This book presents recent advances in reliability investigation of MOS transistors and their applications. Theory and experimental results are discussed, in order to demonstrate the efficacy of the techniques presented. Readers will be enabled to improve their designs in application areas of analog signal processing, ranging from very low frequencies at several Hz levels of biomedical signals to RF applications operating at GHz level, from EEG signals to cognitive radio and encrypted communications or low-noise amplifiers in wireless communications. Presents recent advances in statistical method based reliability estimation of MOS transistors; Includes discussion of theory and experimental results, in order to demonstrate efficacy of techniques presented; Discusses design examples for specific application areas, enabling readers to follow recent advances and trends. | ||
| 532 | 8 | |a Accessibility summary: This PDF does not fully comply with PDF/UA standards, but does feature limited screen reader support, described non-text content (images, graphs), bookmarks for easy navigation and searchable, selectable text. Users of assistive technologies may experience difficulty navigating or interpreting content in this document. We recognize the importance of accessibility, and we welcome queries about accessibility for any of our products. If you have a question or an access need, please get in touch with us at accessibilitysupport@springernature.com. | |
| 532 | 8 | |a No reading system accessibility options actively disabled | |
| 532 | 8 | |a Publisher contact for further accessibility information: accessibilitysupport@springernature.com | |
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